Raman scattering by LO phonon-plasmon coupled modes inn-type$ {\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$

Ibañez, J.; Hopkinson, M.; Cuscó, R.; Artús, L.; Hernandez, S

doi:10.1103/PhysRevB.65.035210

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Raman scattering by LO phonon-plasmon coupled modes inn-type${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$

Author(s): R. Cuscó , L. Artús , S. Hernández , J. Ibáñez , M. Hopkinson

Publication date (Electronic): December 27 2001

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Lindhard Dielectric Function in the Relaxation-Time Approximation

N. D. Mermin (1970)

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Nonparabolicity and warping in the conduction band of GaAs

U Rössler (1984)

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Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriers

W. Faust, D. Hon (1973)

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Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 0163-1829

ISSN (Electronic): 1095-3795

Publication date Created: December 2001

Publication date (Electronic): December 27 2001

Volume: 65

Issue: 3

Article

DOI: 10.1103/PhysRevB.65.035210

SO-VID: 6b3a9391-04d4-47c2-abd5-ab807a0123ed

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Raman scattering by LO phonon-plasmon coupled modes inn-type\({\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}\)

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Most cited references 21

Lindhard Dielectric Function in the Relaxation-Time Approximation

Nonparabolicity and warping in the conduction band of GaAs

Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriers

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