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      Correlating the Radiation Response of MOS Capacitors and Transistors

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          An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

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            Hole traps and trivalent silicon centers in metal/oxide/silicon devices

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              A reliable approach to charge-pumping measurements in MOS transistors

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                Author and article information

                Journal
                IEEE Transactions on Nuclear Science
                IEEE Trans. Nucl. Sci.
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9499
                December 1984
                1984
                : 31
                : 6
                : 1453-1460
                Article
                10.1109/TNS.1984.4333529
                6bf1336f-98fa-4052-8ce1-99eb95ac1ecd
                © 1984
                History

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