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      Control of Ge1−x−y Si x Sn y layer lattice constant for energy band alignment in Ge1−x Sn x /Ge1−x−y Si x Sn y heterostructures

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          The Past, Present, and Future of Silicon Photonics

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            Lasing in direct-bandgap GeSn alloy grown on Si

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              • Record: found
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              Achieving direct band gap in germanium through integration of Sn alloying and external strain

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                Author and article information

                Journal
                Semiconductor Science and Technology
                Semicond. Sci. Technol.
                IOP Publishing
                0268-1242
                1361-6641
                October 01 2017
                October 01 2017
                September 07 2017
                : 32
                : 10
                : 104008
                Article
                10.1088/1361-6641/aa80ce
                6dac5d4c-4e12-4db8-9f93-e4916190cf7e
                © 2017

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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