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Demonstration of Y1Ba2Cu3O7−δand complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate
M. J. Burns ,
P. R. de la Houssaye ,
S. D. Russell ,
G. A. Garcia ,
S. R. Clayton ,
W. S. Ruby ,
L. P. Lee
August 30 1993
August 30 1993
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Most cited references6
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High critical currents in strained epitaxial YBa2Cu3O7−δon Si
G. Connell, J. B. Boyce, D. K. Fork … (1990)
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Bi‐epitaxial grain boundary junctions in YBa2Cu3O7
N Newman, M. S. Colclough, S. M. Garrison … (1991)
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