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      Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

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          Abstract

          Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition ( In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.

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          Band parameters for nitrogen-containing semiconductors

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            Band parameters for III–V compound semiconductors and their alloys

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              Small band gap bowing in In1−xGaxN alloys

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                Author and article information

                Journal
                epjpv
                EPJ Photovoltaics
                an Open Access Journal in Photovoltaics
                EPJ Photovolt.
                EDP Sciences
                2105-0716
                24 March 2017
                24 March 2017
                2017
                : 8
                : ( publisher-idID: epjpv/2017/01 )
                : 85502
                Affiliations
                [1 ] GeePs, UMR 8507, CNRS, , Centrale Supélec, UPsud, UPMC, 11 Rue Joliot-Curie, 91192 Gif-sur-Yvette Cedex, France,
                [2 ] Université Pierre et Marie Curie, , UPMC, 4 Place Jussieu, 75005 Paris, France,
                [3 ] Département des Sciences Physiques, UVSQ, 45 Avenue des États-Unis, , 78035 Versailles, France,
                Author notes
                Article
                pv160015
                10.1051/epjpv/2017003
                6f39a951-e320-432e-aae6-c9325c06353a
                © W. El-Huni et al., published by EDP Sciences, 2017

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                : 18 November 2016
                : 26 January 2017
                Page count
                Figures: 7, Tables: 1, Equations: 6, References: 23, Pages: 6
                Funding
                Funded by: Agence Nationale de la Recherche http://dx.doi.org/10.13039/501100001665
                Award ID: ANR-12-PRGE-0014-01.
                Categories
                Theory and Modelling
                Topical Issue: Theory and modelling
                Custom metadata
                EPJ Photovoltaics 8, 85502 (2017)
                2017
                2017
                2017

                Sustainable & Green chemistry,Materials technology,Semiconductors,Materials for energy,Technical & Applied physics,Renewable energy

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