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      Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

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          Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

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            Over 30% efficient InGaP/GaAs tandem solar cells

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              Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

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                Author and article information

                Journal
                IEEE Electron Device Letters
                IEEE Electron Device Lett.
                Institute of Electrical and Electronics Engineers (IEEE)
                0741-3106
                March 2006
                March 2006
                : 27
                : 3
                : 142-144
                Article
                10.1109/LED.2006.870250
                6f52157e-705e-4af9-b927-31cc14f4e67e
                © 2006
                History

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