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      Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime

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          Two-Dimensional Gas of Massless Dirac Fermions in Graphene

          Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.
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            Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

            When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is an ideal realization of such a 2D system. Here, we report an experimental investigation of magneto transport in a high mobility single layer of graphene. Adjusting the chemical potential using the electric field effect, we observe an unusual half integer QHE for both electron and hole carriers in graphene. Vanishing effective carrier masses is observed at Dirac point in the temperature dependent Shubnikov de Haas oscillations, which probe the 'relativistic' Dirac particle-like dispersion. The relevance of Berry's phase to these experiments is confirmed by the phase shift of magneto-oscillations, related to the exceptional topology of the graphene band structure.
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              Graphene: Status and Prospects

              A. K. Geim (2010)
              Graphene is a wonder material with many superlatives to its name. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have the smallest effective mass (it is zero) and can travel micrometer-long distances without scattering at room temperature. Graphene can sustain current densities 6 orders higher than copper, shows record thermal conductivity and stiffness, is impermeable to gases and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a bench-top experiment. What are other surprises that graphene keeps in store for us? This review analyses recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.
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                Author and article information

                Journal
                Advanced Optical Materials
                Advanced Optical Materials
                Wiley
                21951071
                November 2016
                November 2016
                July 14 2016
                : 4
                : 11
                : 1824-1828
                Affiliations
                [1 ]Key Laboratory of Space Applied Physics and Chemistry; Ministry of Education and Department of Applied Physics; School of Science; Northwestern Polytechnical University; Xi'an 710129 China
                [2 ]Ames Laboratory and Department of Physics and Astronomy; Iowa State University; Ames IA 50011 USA
                [3 ]Key Laboratory of Advanced Micro-structure Materials (MOE) and School of Physics Science and Engineering; Tongji University; Shanghai 200092 China
                [4 ]State Key Laboratory of Tribology; Department of Mechanical Engineering; Tsinghua University; Beijing 100084 China
                [5 ]Institute of Electronic Structure and Laser; FORTH; 71110 Heraklion Crete Greece
                Article
                10.1002/adom.201600303
                6fd6edb4-fa54-441a-b857-f4319517a489
                © 2016

                http://doi.wiley.com/10.1002/tdm_license_1.1

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