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      Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

      Author(s): 1 , 2 , 3 , 4
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

          Andres Castellanos-Gomez, Michele Buscema, Rianda Molenaar … (2014)
          Article 0 comments Cited 503 times – based on 0 reviews     Review now
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            A review of Ga2O3 materials, processing, and devices

            S Pearton, Jiancheng Yang, Michael Mastro … (2018)
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              Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

              Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: December 14 2018
                Publication date (Print): December 14 2018
                Volume: 124
                Issue: 22
                Page: 220901
                Affiliations
                [1 ]Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
                [2 ]Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
                [3 ]U.S. Naval Research Laboratory, Washington, DC 20375, USA
                [4 ]Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
                Article
                DOI: 10.1063/1.5062841
                SO-VID: 700df7b7-1e45-43d7-a84c-e421101de615
                Copyright © © 2018
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