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      Spin-Torque-Biased Magnetic Strip: Nonequilibrium Phase Diagram and Relation to Long Josephson Junctions

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      Physical Review Letters
      American Physical Society (APS)

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Spin Hall effects

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              Classics in Magnetics A Phenomenological Theory of Damping in Ferromagnetic Materials

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                Author and article information

                Journal
                PRLTAO
                Physical Review Letters
                Phys. Rev. Lett.
                American Physical Society (APS)
                0031-9007
                1079-7114
                July 2018
                July 16 2018
                : 121
                : 3
                Article
                10.1103/PhysRevLett.121.037202
                706f407f-2426-4881-a4da-6d6f6c331ef7
                © 2018

                https://link.aps.org/licenses/aps-default-license

                https://link.aps.org/licenses/aps-default-accepted-manuscript-license

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