ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
3
views
0
references
Top references
cited by
83
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
1,169
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Growth of III–V semiconductors by molecular beam epitaxy and their properties
Author(s):
A.Y. Cho
Publication date
Created:
February 1983
Publication date
(Print):
February 1983
Journal:
Thin Solid Films
Publisher:
Elsevier BV
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Model Reduction of Parametrized Systems 2015
Author and article information
Journal
Title:
Thin Solid Films
Abbreviated Title:
Thin Solid Films
Publisher:
Elsevier BV
ISSN (Print):
00406090
Publication date Created:
February 1983
Publication date (Print):
February 1983
Volume
: 100
Issue
: 4
Pages
: 291-317
Article
DOI:
10.1016/0040-6090(83)90154-2
SO-VID:
712b30f4-2eaf-4256-831d-c2a63b45e4d5
Copyright ©
© 1983
License:
http://www.elsevier.com/tdm/userlicense/1.0/
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
1,169
Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
Authors:
James Speck
,
Yuichi Oshima
,
Feng Jung Wu
…
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Authors:
Y Oshima
,
K Kawara
,
T. Shinohe
…
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Authors:
Kohei Sasaki
,
Akito Kuramata
,
Takekazu Masui
…
See all similar
Cited by
82
Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
Authors:
Itaru Kamiya
,
L. Florez
,
J. P. Harbison
…
Chemical beam epitaxy of InP and GaAs
Authors:
W. Tsang
Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
Authors:
D Sivco
,
A. Y. Cho
,
T. H. Wood
…
See all cited by