A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement

Liu, Tianjiao; Wong, Thomas T. Y.; Shen, Z. John

doi:10.1109/TPEL.2017.2789240

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A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement

Author(s): Tianjiao Liu , Thomas T. Y. Wong , Z. John Shen

Publication date (Print): November 2018

Journal: IEEE Transactions on Power Electronics

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 33

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A new method for determining the FET small-signal equivalent circuit

G Dambrine, E. Playez, F. Heliodore … (1988)

0 comments Cited 101 times – based on 0 reviews      Review now

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Fundamentals of Power Semiconductor Devices

B. Jayant Baliga (2008)

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Conversions between S, Z, Y, H, ABCD, and T parameters which are valid for complex source and load impedances

D.A. Frickey (1994)

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Title: IEEE Transactions on Power Electronics

Abbreviated Title: IEEE Trans. Power Electron.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0885-8993

ISSN (Electronic): 1941-0107

Publication date Created: November 2018

Publication date (Print): November 2018

Volume: 33

Issue: 11

Pages: 9819-9833

Article

DOI: 10.1109/TPEL.2017.2789240

SO-VID: 723cba93-4eb4-4417-806b-f306493c08b8

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A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement

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Open source discrete and agent-based modeling frameworks for biology

Most cited references 33

A new method for determining the FET small-signal equivalent circuit

Fundamentals of Power Semiconductor Devices

Conversions between S, Z, Y, H, ABCD, and T parameters which are valid for complex source and load impedances

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