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Improve the Properties of p-i-nα-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films

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      Abstract

      Gallium-doped zinc oxide (GZO) thin films were deposited on glass, and the process parameters are RF power of 50 W and working pressure of 5 mTorr, and the substrate temperature was changed from room temperature to 300°C. At first, the thickness was around 300 nm by controlling the deposition time. The effects of substrate temperature on the crystallinity, lattice constant (c), carrier mobility, carrier concentration, resistivity, and optical transmission rate of the GZO thin films were studied. The 200°C-deposited GZO thin films had the best crystallinity, the larger carrier concentration and carrier mobility, and the lowest resistivity. For that, the thickness of the GZO thin films was extended to around 1000 nm. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the GZO thin films, which were then used as the substrate electrodes to fabricate the p-i-nα-Si:H thin-film solar cells. The haze ratio of the GZO thin films increased with increasing HCl concentration, and that would effectively enhance light trapping inside the absorber material of solar cells and then improve the efficiency of the fabricated thin-film solar cells.

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      Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors

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        Transparent Conducting Oxides—An Up-To-Date Overview

        Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.
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          Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature

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            Author and article information

            Journal
            Journal of Nanomaterials
            Journal of Nanomaterials
            Hindawi Limited
            1687-4110
            1687-4129
            2013
            2013
            : 2013
            :
            : 1-6
            10.1155/2013/495752
            © 2013

            http://creativecommons.org/licenses/by/3.0/

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