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      Under-doped La2-xSrxCuO4 with x = 0.063 - 0.125: TSFZ growth of high-quality crystals and anomalous doping dependences of superconducting properties

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          Abstract

          A series of high-quality La2-xSrxCuO4 (LSCO) superconductor crystals in the under-doping region with x = 0.063, 0.07, 0.09, 0.10, 0.111 and 0.125 has been successfully prepared by traveling-solvent floating-zone (TSFZ) technique. The crystals are large and free of sub-grains and foreign phases. The high crystal quality has been revealed by double-crystal x-ray rocking curves and Rutherford backscattering spectrometry combined with ion-beam channeling effect. We find that the evolutions of the superconducting transition width and volume fraction as a function of carrier concentration exhibit interesting anomalies in the vicinity of some magic number doping levels such as x =1/4^2 (=0.0625) and 1/3^2 (=0.111). We argue that these behaviours are of intrinsic electronic origin.

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          Author and article information

          Journal
          12 December 2002
          Article
          10.1088/0953-2048/16/3/101
          cond-mat/0212282
          Custom metadata
          Supercond. Sci. Technol. 16 (2003) L7-L9
          4 pages, 4 figures, to be published on Superconductor Science and Technology
          cond-mat.supr-con

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