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Guest Editorial: The dawn of gallium oxide microelectronics
Author(s):
Masataka Higashiwaki
,
Gregg H. Jessen
Publication date
Created:
February 05 2018
Publication date
(Print):
February 05 2018
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Kohei Sasaki
,
Takekazu Masui
,
Shigenobu Yamakoshi
…
(2012)
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Deep-ultraviolet transparent conductive β-Ga2O3 thin films
Masahiro Orita
,
Hiromichi Ohta
,
Masahiro Hirano
…
(2000)
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Oxygen vacancies and donor impurities in β-Ga2O3
C. Van de Walle
,
A. Janotti
,
J Weber
…
(2010)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
February 05 2018
Publication date (Print):
February 05 2018
Volume
: 112
Issue
: 6
Page
: 060401
Article
DOI:
10.1063/1.5017845
SO-VID:
730e31d7-7a51-44e4-874f-40da6bcbdc5b
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© 2018
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