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      Guest Editorial: The dawn of gallium oxide microelectronics

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      Applied Physics Letters
      AIP Publishing

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          Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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            Deep-ultraviolet transparent conductive β-Ga2O3 thin films

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              Oxygen vacancies and donor impurities in β-Ga2O3

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                February 05 2018
                February 05 2018
                : 112
                : 6
                : 060401
                Article
                10.1063/1.5017845
                730e31d7-7a51-44e4-874f-40da6bcbdc5b
                © 2018
                History

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