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      Guest Editorial: The dawn of gallium oxide microelectronics

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

          Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
          Article 0 comments Cited 296 times – based on 0 reviews     Review now
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            Deep-ultraviolet transparent conductive β-Ga2O3 thin films

            Masahiro Orita, Hiromichi Ohta, Masahiro Hirano … (2000)
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              Oxygen vacancies and donor impurities in β-Ga2O3

              C. Van de Walle, A. Janotti, J Weber … (2010)
              Article 0 comments Cited 198 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: February 05 2018
                Publication date (Print): February 05 2018
                Volume: 112
                Issue: 6
                Page: 060401
                Article
                DOI: 10.1063/1.5017845
                SO-VID: 730e31d7-7a51-44e4-874f-40da6bcbdc5b
                Copyright © © 2018
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