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High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

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      Abstract

      Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm 2/Vs with a carrier concentration ( N) of 2.55 × 10 20 cm −3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm 2/Vs with an N of 2.22 × 10 20 cm −3.

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      New n-Type Transparent Conducting Oxides

      Most research to develop highly transparent and conductive thin films has focused onn-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2and In2O3were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2(Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4were developed prior to 1980, but their TCO films have not yet been used widely.
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        Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO

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          The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

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            Author and article information

            Affiliations
            Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 Japan
            Contributors
            +81-887-57-2734 , nomoto.junichi@kochi-tech.ac.jp
            makino.hisao@kochi-tech.ac.jp
            yamamoto.tetsuya@kochi-tech.ac.jp
            Journal
            Nanoscale Res Lett
            Nanoscale Res Lett
            Nanoscale Research Letters
            Springer US (New York )
            1931-7573
            1556-276X
            30 June 2016
            30 June 2016
            2016
            : 11
            27365000 4929117 1535 10.1186/s11671-016-1535-1
            © The Author(s). 2016

            Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

            Funding
            Funded by: FundRef http://dx.doi.org/10.13039/501100001691, Japan Society for the Promotion of Science;
            Award ID: KAKENHI Grant Number 26790050
            Award ID: KAKENHI Grant Number 30320120
            Award Recipient :
            Categories
            Nano Express
            Custom metadata
            © The Author(s) 2016

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