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      Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices.

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          Abstract

          Sn-doped In2O3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.

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          Author and article information

          Journal
          ACS Appl Mater Interfaces
          ACS applied materials & interfaces
          American Chemical Society (ACS)
          1944-8252
          1944-8244
          Oct 26 2016
          : 8
          : 42
          Affiliations
          [1 ] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University , Xi'an 710072, P. R. China.
          [2 ] School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, PR China.
          [3 ] Department of Physics, South University of Science and Technology of China , Shenzhen, 518055, PR China.
          [4 ] Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, PR China.
          Article
          10.1021/acsami.6b09166
          27726330

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