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      Cascading phase transformations in high carbon steel resulting in the formation of inverse bainite: An atomic scale investigation

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          Abstract

          Atom probe tomography (APT) has been used to understand the redistribution of solutes during the isothermal cascading phase transformations from supersaturated austenite resulting in the formation of inverse bainite. Different cascading reactions resulting in the formation of inverse bainite, namely the cementite midrib formation, ferrite formation, secondary cementite formation, and the degenerated microstructure of inverse bainite have been studied in detail. Solute profiles across the different transformation interfaces indicate Negligible Partitioning Local Equilibrium (NPLE) type growth kinetics for cementite midrib, whereas a transition in growth kinetics from Para Equilibrium (PE) to Negligible Partitioning Local Equilibrium (NPLE) is observed for secondary cementite and ferrite transformation. The results provide a strong indication that the inverse bainitic transformation occurs as a consequence of individual cascading phase transformations starting from parent austenite, and the transformation of inverse bainite occurs in a similar manner to Widmanstatten ferrite/bainitic ferrite with carbon diffusion-controlled growth, and without any reconstructive or long-range diffusion of substitutional solutes.

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          In situ site-specific specimen preparation for atom probe tomography.

          Techniques for the rapid preparation of atom-probe samples extracted directly from a Si wafer are presented and discussed. A systematic mounting process to a standardized microtip array allows approximately 12 samples to be extracted from a near-surface region and mounted for subsequent focused-ion-beam sharpening in a short period of time, about 2h. In addition, site-specific annular mill extraction techniques are demonstrated that allow specific devices or structures to be removed from a Si wafer and analyzed in the atom-probe. The challenges presented by Ga-induced implantation and damage, particularly at a standard ion-beam accelerating voltage of 30 keV, are shown and discussed. A significant reduction in the extent of the damaged regions through the application of a low-energy "clean-up" ion beam is confirmed by atom-probe analysis of the damaged regions. The Ga+ penetration depth into {100} Si at 30 keV is approximately 40 nm. Clean-up with either a 5 or 2 keV beam reduces the depth of damaged Si to approximately 5 nm and <1 nm, respectively. Finally, a NiSi sample was extracted from a Si wafer, mounted to a microtip array, sharpened, cleaned up with a 5 keV beam and analyzed in the atom probe. The current results demonstrate that specific regions of interest can be accessed and preserved throughout the sample-preparation process and that this preparation method leads to high-quality atom probe analysis of such nano-structures.
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            Theory of Growth of Spherical Precipitates from Solid Solution

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              The bainite transformation in a silicon steel

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                Author and article information

                Contributors
                rangasay@ualberta.ca
                leijun@ualberta.ca
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                3 April 2019
                3 April 2019
                2019
                : 9
                : 5597
                Affiliations
                [1 ]GRID grid.17089.37, Department of Chemical and Materials Engineering, , University of Alberta, ; Edmonton, Alberta T6G 2V4 Canada
                [2 ]ISNI 0000 0004 0446 2659, GRID grid.135519.a, Materials Science and Technology Division, , Oak Ridge National Laboratory, ; Oak Ridge, TN 37831-6064 USA
                [3 ]ISNI 0000 0004 0446 2659, GRID grid.135519.a, Center for Nanophase Materials Sciences, , Oak Ridge National Laboratory, PO Box 2008 MS 6064, ; Oak Ridge, TN 37831-6064 USA
                [4 ]ISNI 0000 0001 2315 1184, GRID grid.411461.7, Department of Mechanical, Aerospace and Biomedical Engineering, , University of Tennessee, ; Knoxville, TN 37996 USA
                Author information
                http://orcid.org/0000-0002-4272-7043
                Article
                42037
                10.1038/s41598-019-42037-9
                6447559
                30944369
                74396fd4-2491-4b7d-bc19-7de12c81547f
                © The Author(s) 2019

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 7 November 2018
                : 22 March 2019
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