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      Electron resonant tunneling in Si/SiGe double barrier diodes

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Resonant tunneling through quantum wells at frequencies up to 2.5 THz

          C D Parker, D. Peck, T. C. L. G. Sollner … (1983)
          Article 0 comments Cited 339 times – based on 0 reviews     Review now
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            Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices.

            Brugger, Wolf, Jorke … (1985)
            Article 0 comments Cited 147 times – based on 0 reviews     Review now
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              Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

              B. S. Meyerson (1986)
              Article 0 comments Cited 141 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: August 19 1991
                Publication date (Print): August 19 1991
                Volume: 59
                Issue: 8
                Pages: 973-975
                Article
                DOI: 10.1063/1.106319
                SO-VID: 75b5c524-8b06-43b4-8525-5371f2ebe045
                Copyright © © 1991
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