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Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

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      Abstract

      We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

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      Most cited references 16

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      A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

      Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.
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        Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier

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          Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts

          We have directly measured coherent high-frequency magnetization dynamics in ferromagnet films induced by a spin-polarized DC current. The precession frequency can be tuned over a range of several gigahertz, by varying the applied current. The frequencies of excitation also vary with applied field, resulting in a microwave oscillator that can be tuned from below 5 GHz to above 40 GHz. This novel method of inducing high-frequency dynamics yields oscillations having quality factors from 200 to 800. We compare our results with those from single-domain simulations of current-induced dynamics.
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            Author and article information

            Journal
            13 May 2012
            2012-05-15
            1205.2835
            10.1103/PhysRevLett.108.197203

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

            Custom metadata
            Phys. Rev. Lett. 108, 197203 (2012)
            5 pages; supplementary material added
            cond-mat.mes-hall

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