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      • Record: found
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      Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

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          Abstract

          The band alignment of ZrO 2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N 2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO 2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO 2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10 -6 A/cm 2.

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          High-κ gate dielectrics: Current status and materials properties considerations

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            High dielectric constant oxides

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              Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy

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                Author and article information

                Journal
                Journal ID (nlm-ta): Nanoscale Res Lett
                Title: Nanoscale Research Letters
                Publisher: Springer
                ISSN (Print): 1931-7573
                ISSN (Electronic): 1556-276X
                Publication date Collection: 2011
                Publication date (Electronic): 10 August 2011
                Volume: 6
                Issue: 1
                Page: 489
                Affiliations
                [1 ]Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia
                Article
                Publisher ID: 1556-276X-6-489
                DOI: 10.1186/1556-276X-6-489
                PMC ID: 3212003
                PubMed ID: 21831264
                SO-VID: 770fda96-469e-407e-bb47-843577e88485
                Copyright © Copyright ©2011 Wong and Cheong; licensee Springer.
                License:

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                Date received : 11 April 2011
                Date accepted : 10 August 2011
                Categories
                Subject: Nano Express

                ScienceOpen disciplines: Nanomaterials
                Keywords: electrical breakdown field,oxidation,sputtered-zr,nitrous oxide,band alignment
                Data availability:
                ScienceOpen disciplines: Nanomaterials
                Keywords: electrical breakdown field, oxidation, sputtered-zr, nitrous oxide, band alignment

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