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      Fabrication of Straight Silicon Nanowires and Their Conductive Properties

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          Abstract

          Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40–200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas has significant impacts on the microstructure of the NWs. By increasing the hydrogen ratio in the forming gas, straight and crystal Si NWs with thin oxide shells are obtained. Both the conductive properties along and perpendicular to the NW are investigated by conductive atomic force microscopy (CAFM) on single NWs. The conductance perpendicular to the NW is too poor to be detected, while a weak conductance can be measured along the NW. The results indicate that the measured resistance mainly comes from the contact(s), and the Si NWs exhibit typical semiconductive conductance themselves, which should have potential applications in nanoelectronics.

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          Most cited references43

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          Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

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            25th anniversary article: semiconductor nanowires--synthesis, characterization, and applications.

            Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies.
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              Controlled Growth and Structures of Molecular-Scale Silicon Nanowires

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                Author and article information

                Contributors
                xjyang@fudan.edu.cn
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                14 August 2015
                14 August 2015
                2015
                : 10
                : 325
                Affiliations
                [ ]State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai, 200433 China
                [ ]Department of Electrical Engineering, University of California, Los Angeles, CA 90095 USA
                Article
                1025
                10.1186/s11671-015-1025-x
                4534481
                26269253
                7799c07a-3afd-4a4e-a552-59853f1a4dc3
                © Wu et al. 2015

                Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                : 5 June 2015
                : 27 July 2015
                Categories
                Nano Express
                Custom metadata
                © The Author(s) 2015

                Nanomaterials
                si nanowires,annealing conditions,properties,conductive atomic force microscopy
                Nanomaterials
                si nanowires, annealing conditions, properties, conductive atomic force microscopy

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