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      Electrical properties and defect model of tin-doped indium oxide layers

      Author(s): ,
      Publication date Created:
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      Journal: Applied Physics A Solids and Surfaces
      Publisher: Springer Nature

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          Neutral Impurity Scattering in Semiconductors

          Cavid Erginsoy (1950)
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            XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors

            R.B. Dingle (2010)
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              Optical and electrical properties of doped In2O3 films

              H. Köstlin, R. Jost, W. Lems (1975)
              Article 0 comments Cited 60 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics A Solids and Surfaces
                Abbreviated Title: Appl. Phys. A
                Publisher: Springer Nature
                ISSN (Print): 0721-7250
                ISSN (Electronic): 1432-0630
                Publication date Created: April 1982
                Publication date (Print): April 1982
                Volume: 27
                Issue: 4
                Pages: 197-206
                Article
                DOI: 10.1007/BF00619080
                SO-VID: 78371ca5-0e8d-4e0f-8a00-ff0bc5da186e
                Copyright © © 1982
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