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      Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Most cited references20

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          Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

          M. Sturge (1962)
          Article 0 comments Cited 404 times – based on 0 reviews     Review now
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            Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

            H. C. Casey, Frank Stern (1976)
            Article 0 comments Cited 214 times – based on 0 reviews     Review now
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              Calculated spectral dependence of gain in excited GaAs

              Frank Stern (1976)
              Article 0 comments Cited 143 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: December 1978
                Publication date (Print): December 1978
                Volume: 49
                Issue: 12
                Pages: 6103-6108
                Article
                DOI: 10.1063/1.324530
                SO-VID: 78ac9803-6fa7-4849-94f5-6f7d0206ca7c
                Copyright © © 1978
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