Correction: Jood, P. and Ohta, M. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides. Materials 2015, 8, 1124–1149

Abstract

The authors wish to make the following corrections to this paper [1]. The authors regret that the lattice thermal conductivity (κ at) values of some samples in Table 1 and thermoelectric figure of merit (ZT) values of some samples in Table 2 were not correct. The tables with correct κ lat and ZT values are shown below. The authors would like to apologize for any inconvenience caused. materials-08-05315-t001_Table 1 Table 1 Seebeck coefficient (S), electrical resistivity (ρ), carrier mobility (μ), power factor (S 2/ρ), lattice thermal conductivity (κ lat), and thermoelectric figure of merit (ZT) at room temperature in the in-plane (ab-plane) and out-of-plane (c-axis) directions for a single crystal of nearly stoichiometric TiS2 [2] and polycrystalline Ti1.008S2 [3]. Sample Direction S (μV·K−1) ρ (μΩ m) μ (cm2·V−1·s−1) S 2/ρ (μW·K−2·m−1) κ lat (W·K−1·m−1) ZT Single crystal In-plane −251 17 15 3710 6.35 0.16 Single crystal Out-of-plane - 13,000 0.017 - 4.21 - Polycrystalline In-plane −80 6.2 2.3 1030 2.0 0.12 Polycrystalline Out-of-plane −84 11 1.2 630 1.8 0.10 materials-08-05315-t002_Table 2 Table 2 Seebeck coefficient (S), electrical resistivity (ρ), total thermal conductivity (κtotal), lattice thermal conductivity (κlat), power factor (S 2/ρ), and thermoelectric figure of merit (ZT) in the in-plane (ab-plane) and out-of-plane (c-axis) directions of state-of-the-art misfit layered sulfides: [MS]1+m TS2 (M = La, Yb; T = Cr, Nb) [4,5]. Sample Direction T (K) ρ (μΩ·m) S (μV·K−1) κtotal (W·K−1·m−1) κlat(W·K−1·m−1) S 2/ρ (μW·K−2·m−1) ZT Reference (Yb2S2)0.62NbS2 In-plane 300 19.0 60 0.80 0.41 200 0.1 [5] (La2S2)0.62NbS2 In-plane 300 11.5 22 - - 50 - [5] (LaS)1.14NbS2 a In-plane 300 7.6 37 2.5 1.50 177 0.02 [4] 950 22.0 83 2.00 0.93 316 0.15 Out-of-plane 300 13.3 25 2.04 1.48 49 0.01 950 32.1 72 1.62 0.88 162 0.09 (LaS)1.14NbS2 b In-plane 300 5.2 35 4.88 3.45 233 0.02 [4] 950 16.9 83 3.25 1.86 405 0.12 Out-of-plane 300 9.3 25 1.56 0.75 70 0.01 950 28.5 56 1.34 0.52 111 0.08 (LaS)1.2CrS2 a In-plane 950 207 −172 1.16 1.04 143 0.11 [4] Out-of-plane 950 223 −174 1.02 0.91 137 0.13 (LaS)1.2CrS2 b In-plane 950 171 −172 1.25 1.11 174 0.14 [4] Out-of-plane 950 278 −154 0.92 0.84 84 0.08 a Small grains (~1 μm), weak/random orientation of grains; b Large grains (>20 μm), strong orientation of grains perpendicular to the pressing direction.