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      Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

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          Luminescence properties of defects in GaN

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            Nanowire photonics

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              Gallium vacancies and the yellow luminescence in GaN

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                Author and article information

                Journal
                Journal of Physics D: Applied Physics
                J. Phys. D: Appl. Phys.
                IOP Publishing
                0022-3727
                1361-6463
                October 01 2014
                October 01 2014
                September 11 2014
                : 47
                : 39
                : 394010
                Article
                10.1088/0022-3727/47/39/394010
                7a047930-1dac-4a84-9380-c6e39eeb5cbf
                © 2014
                History

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