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      Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga 2O 3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

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          Abstract

          In this work, we have achieved synthesizing large-area high-density β-Ga 2O 3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga 2O 3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga 2O 3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga 2O 3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga 2O 3 nanowires is also presented.

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          A review of Ga2O3 materials, processing, and devices

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            Development of gallium oxide power devices

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              Individual β-Ga2O3 nanowires as solar-blind photodetectors

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                Author and article information

                Journal
                Nanomaterials (Basel)
                Nanomaterials (Basel)
                nanomaterials
                Nanomaterials
                MDPI
                2079-4991
                28 May 2020
                June 2020
                : 10
                : 6
                : 1031
                Affiliations
                [1 ]R&D Center for Solid-state Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; jiachunyang16@ 123456mails.ucas.edu.cn (C.J.); spring@ 123456semi.ac.cn (X.Y.)
                [2 ]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
                [3 ]Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, Korea; dwjeon@ 123456kicet.re.kr
                [4 ]Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China; xujianlong@ 123456suda.edu.cn
                Author notes
                [* ]Correspondence: jhp5511@ 123456kicet.re.kr (J.-H.P.); yyzhang@ 123456semi.ac.cn (Y.Z.)
                Author information
                https://orcid.org/0000-0002-7114-0065
                https://orcid.org/0000-0002-1419-485X
                Article
                nanomaterials-10-01031
                10.3390/nano10061031
                7353159
                32481612
                7a0ae1ec-3305-49f8-a8ab-cff47655e230
                © 2020 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 28 April 2020
                : 26 May 2020
                Categories
                Article

                β-ga2o3,nanowires,mocvd
                β-ga2o3, nanowires, mocvd

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