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      Relative angular precision in electron backscatter diffraction: A comparison between cross correlation and Hough transform based analysis : Relative angular precision in electron backscatter diffraction…

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      Crystal Research and Technology

      Wiley-Blackwell

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          Most cited references 14

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          High-resolution elastic strain measurement from electron backscatter diffraction patterns: new levels of sensitivity.

          In this paper, we demonstrate that the shift between similar features in two electron backscatter diffraction (EBSD) patterns can be measured using cross-correlation based methods to +/- 0.05 pixels. For a scintillator screen positioned to capture the usual large solid angle employed in EBSD orientation mapping this shift corresponds to only approximately 8.5 x 10(-5)rad at the pattern centre. For wide-angled EBSD patterns, the variation in the entire strain and rotation tensor can be determined from single patterns. Repeated measurements of small rotations applied to a single-crystal sample, determined using the shifts at four widely separated parts of the EBSD patterns, showed a standard deviation of 1.3 x 10(-4) averaged over components of the displacement gradient tensor. Variations in strains and rotations were measured across the interface in a cross-sectioned Si1-x Gex epilayer on a Si substrate. Expansion of the epilayer close to the section surface is accommodated by tensile strains and lattice curvature that extend a considerable distance into the substrate. Smaller and more localised shear strains are observed close to the substrate-layer interface. EBSD provides an impressive and unique combination of high strain sensitivity, high spatial resolution and ease of use.
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            High resolution mapping of strains and rotations using electron backscatter diffraction

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              Progressive steps in the development of electron backscatter diffraction and orientation imaging microscopy

               D. Dingley (2004)
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                Author and article information

                Journal
                Crystal Research and Technology
                Crystal Research and Technology
                Wiley-Blackwell
                02321300
                June 2014
                June 30 2014
                : 49
                : 6
                : 435-439
                10.1002/crat.201400075
                © 2014

                http://doi.wiley.com/10.1002/tdm_license_1.1

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