Correlative Multimodal Probing of Ionically-Mediated Electromechanical Phenomena in Simple Oxides

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Abstract

The local interplay between the ionic and electronic transport in NiO is explored using correlative imaging by first-order reversal curve measurements in current-voltage and electrochemical strain microscopy. Electronic current and electromechanical response are observed in reversible and electroforming regime. These studies provide insight into local mechanisms of electroresistive phenomena in NiO and establish universal method to study interplay between the ionic and electronic transport and electrochemical transformations in mixed electronic-ionic conductors.

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Nanoscale memristor device as synapse in neuromorphic systems.

Sung Hyun Jo, Ting Hao Chang, Idongesit Ebong … (2010)

A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.

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Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3.

Krzysztof Szot, Wolfgang Speier, Gustav Bihlmayer … (2006)

The great variability in the electrical properties of multinary oxide materials, ranging from insulating, through semiconducting to metallic behaviour, has given rise to the idea of modulating the electronic properties on a nanometre scale for high-density electronic memory devices. A particularly promising aspect seems to be the ability of perovskites to provide bistable switching of the conductance between non-metallic and metallic behaviour by the application of an appropriate electric field. Here we demonstrate that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO(3). The phenomenon is shown to originate from local modulations of the oxygen content and to be related to the self-doping capability of the early transition metal oxides. Our results show that extended defects, such as dislocations, can act as bistable nanowires and hold technological promise for terabit memory devices.

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Quantized conductance atomic switch.

K Terabe, T. Hasegawa, T Nakayama … (2005)

A large variety of nanometre-scale devices have been investigated in recent years that could overcome the physical and economic limitations of current semiconductor devices. To be of technological interest, the energy consumption and fabrication cost of these 'nanodevices' need to be low. Here we report a new type of nanodevice, a quantized conductance atomic switch (QCAS), which satisfies these requirements. The QCAS works by controlling the formation and annihilation of an atomic bridge at the crossing point between two electrodes. The wires are spaced approximately 1 nm apart, and one of the two is a solid electrolyte wire from which the atomic bridges are formed. We demonstrate that such a QCAS can switch between 'on' and 'off' states at room temperature and in air at a frequency of 1 MHz and at a small operating voltage (600 mV). Basic logic circuits are also easily fabricated by crossing solid electrolyte wires with metal electrodes.

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Author and article information

Journal

Journal ID (nlm-ta): Sci Rep

Journal ID (iso-abbrev): Sci Rep

Title: Scientific Reports

Publisher: Nature Publishing Group

ISSN (Electronic): 2045-2322

Publication date (Electronic): 11 October 2013

Publication date Collection: 2013

Volume: 3

Electronic Location Identifier: 2924

Affiliations

[1 ]The Center for Nanophase Materials Sciences , Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

[2 ]School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU) , Suwon 440-746, Republic of Korea

[3 ]Division of Quantum Phases and Devices, Department of Physics, Konkuk University , Seoul 143-701, Republic of Korea

[4 ]Electronic Materials Research Center, Korea Institute of Science and Technology , Seoul 136-791, Republic of Korea

[5 ]Hybrid Materials Research Center and Institute of Nanotechnology and Advanced Materials Engineering, Sejong University , Seoul 143-747, Republic of Korea

Author notes

[a ] yunseokkim@ 123456skku.edu

[b ] sergei2@ 123456ornl.gov

Article

Publisher Item ID: srep02924

DOI: 10.1038/srep02924

PMC ID: 3795354

PubMed ID: 24113291

SO-VID: 7bd27f30-4722-4d1f-a9d5-427bab59b42b

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/

Correlative Multimodal Probing of Ionically-Mediated Electromechanical Phenomena in Simple Oxides

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Most cited references 19

Nanoscale memristor device as synapse in neuromorphic systems.

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3.

Quantized conductance atomic switch.

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