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Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

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      Most cited references 289

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      Deterministic Nonperiodic Flow

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        Single-layer MoS2 transistors.

        Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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          Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices

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            Author and article information

            Affiliations
            [1 ]Department of Mechanical Engineering, University of California, Berkeley, Berkeley, California 94720, USA
            [2 ]Department of Mechanical and Control Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan
            [3 ]Attolight AG, 1015 Lausanne, Switzerland
            [4 ]Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
            [5 ]Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
            Journal
            Applied Physics Reviews
            Applied Physics Reviews
            AIP Publishing
            1931-9401
            December 2017
            December 2017
            : 4
            : 4
            : 041304
            10.1063/1.5001072
            © 2017

            https://publishing.aip.org/authors/rights-and-permissions

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