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      Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories.

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          Abstract

          Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.

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          Author and article information

          Journal
          Nanoscale
          Nanoscale
          Royal Society of Chemistry (RSC)
          2040-3372
          2040-3364
          Nov 07 2015
          : 7
          : 41
          Affiliations
          [1 ] Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China. val.roy@cityu.edu.hk.
          Article
          10.1039/c5nr05054e
          26445097
          7c83f453-a1c2-4c9a-8e6c-a08b0fd5fbbc
          History

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