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      Migration-Enhanced Epitaxy of GaAs and AlGaAs

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      Japanese Journal of Applied Physics
      Japan Society of Applied Physics

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          Journal
          JAPNDE
          Japanese Journal of Applied Physics
          Jpn. J. Appl. Phys.
          Japan Society of Applied Physics
          0021-4922
          1347-4065
          February 20 1988
          February 20 1988
          : 27
          : Part 1, No. 2
          : 169-179
          Article
          10.1143/JJAP.27.169
          7cb9d77b-17d9-4706-9c10-5f5a37f97966
          © 1988
          History
          Product
          Self URI (article page): http://stacks.iop.org/1347-4065/27/169

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