GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Bean, J. C.; Feldman, L C; Fiory, A. T.; Nakahara, S; Robinson, I. K.

doi:10.1116/1.572361

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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Author(s): J. C. Bean , L. C. Feldman , A. T. Fiory , S. Nakahara , I. K. Robinson

Publication date Created: April 1984

Publication date (Print): April 1984

Journal: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Publisher: American Vacuum Society

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Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Abbreviated Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Publisher: American Vacuum Society

ISSN (Print): 0734-2101

ISSN (Electronic): 1520-8559

Publication date Created: April 1984

Publication date (Print): April 1984

Volume: 2

Issue: 2

Pages: 436-440

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DOI: 10.1116/1.572361

SO-VID: 7cd97724-cefe-491f-a65e-b43baed6e207

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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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