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      Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

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          Principles and applications of electrochemical capacitors

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            Ferroelectricity in hafnium oxide thin films

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              Energy Scavenging for Mobile and Wireless Electronics

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                October 14 2017
                October 14 2017
                : 122
                : 14
                : 144105
                Affiliations
                [1 ]Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
                [2 ]Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023, China
                [3 ]NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64, Dresden D-01187, Germany
                [4 ]Fraunhofer IPMS, Koenigsbruecker Str. 178, Dresden 01099, Germany
                [5 ]Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
                Article
                10.1063/1.4989908
                7d36f8f3-d3a8-467b-94e8-a8be9fd368cb
                © 2017
                History

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