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      Misfit dislocations in InP/InGaAsP/InP double‐heterostructure wafers grown by liquid phase epitaxy

      Author(s): , , , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

          T. B. Light, S. Mader, J. Matthews (1970)
          Article 0 comments Cited 170 times – based on 0 reviews     Review now
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            Ultimate low-loss single-mode fibre at 1.55 μm

            T Miya, Y. Terunuma, T Hosaka … (1979)
            Article 0 comments Cited 146 times – based on 0 reviews     Review now
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              InGaAsP heterostructure avalanche photodiodes with high avalanche gain

              Katsuhiko Nishida, Kenko Taguchi, Yoshishige Matsumoto (1979)
              Article 0 comments Cited 61 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: July 1982
                Publication date (Print): July 1982
                Volume: 53
                Issue: 7
                Pages: 4761-4766
                Article
                DOI: 10.1063/1.331305
                SO-VID: 7d640b6d-b379-4e12-b4a6-3f9656c29658
                Copyright © © 1982
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