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      High-performance H 2S gas sensor utilizing MXene/MoS 2 heterostructure synthesized via the Langmuir–Blodgett technique and chemical vapor deposition†

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      RSC Advances
      The Royal Society of Chemistry

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          Abstract

          In this study, we developed an H 2S gas sensor based on a MXene/MoS 2 heterostructure, using the Langmuir–Blodgett (LB) technique and chemical vapor deposition (CVD). Ti 3C 2T x MXene nanosheets were uniformly transferred onto SiO 2/Si substrates via the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS 2 was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS 2 heterostructure showing a response of 0.5 to H 2S – approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for H 2S over other gases, including H 2, NO 2, NH 3, NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications.

          Abstract

          An H 2S gas sensor was developed using an MXene/MoS 2 heterostructure, fabricated through Langmuir–Blodgett and CVD. The gas sensor showed a 5-fold enhancement in gas response for H 2S, demonstrating a new approach for advanced electronic applications.

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          Author and article information

          Journal
          RSC Adv
          RSC Adv
          RA
          RSCACL
          RSC Advances
          The Royal Society of Chemistry
          2046-2069
          26 November 2024
          25 November 2024
          26 November 2024
          : 14
          : 51
          : 37781-37787
          Affiliations
          [a ] Thin Film Materials Research Group, Korea Research Institute of Chemical Technology Daejeon 34114 South Korea mh0827@ 123456krict.re.kr msung@ 123456krict.re.kr
          Author notes
          [‡]

          Equally contributed.

          Author information
          https://orcid.org/0000-0002-0487-2055
          https://orcid.org/0000-0002-3518-5952
          https://orcid.org/0000-0002-9182-5088
          https://orcid.org/0000-0003-2030-2391
          Article
          d4ra07555b
          10.1039/d4ra07555b
          11589806
          39600997
          7d947032-9bf1-4d32-bccb-b994932ef1a0
          This journal is © The Royal Society of Chemistry

          This article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

          History
          : 22 October 2024
          : 22 November 2024
          Page count
          Pages: 7
          Funding
          Funded by: National Research Foundation of Korea, doi 10.13039/501100003725;
          Award ID: NRF-2021M3H4A3A02086431
          Funded by: Korea Research Institute of Chemical Technology, doi 10.13039/501100003704;
          Award ID: KS2421-10
          Categories
          Chemistry
          Custom metadata
          Paginated Article

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