In this study, we developed an H 2S gas sensor based on a MXene/MoS 2 heterostructure, using the Langmuir–Blodgett (LB) technique and chemical vapor deposition (CVD). Ti 3C 2T x MXene nanosheets were uniformly transferred onto SiO 2/Si substrates via the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS 2 was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS 2 heterostructure showing a response of 0.5 to H 2S – approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for H 2S over other gases, including H 2, NO 2, NH 3, NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications.
An H 2S gas sensor was developed using an MXene/MoS 2 heterostructure, fabricated through Langmuir–Blodgett and CVD. The gas sensor showed a 5-fold enhancement in gas response for H 2S, demonstrating a new approach for advanced electronic applications.