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      A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

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          Effective mass for strainedp‐type Si1−xGex

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            Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

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              Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

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                Author and article information

                Journal
                IEEE Transactions On Nanotechnology
                IEEE Trans. Nanotechnology
                Institute of Electrical and Electronics Engineers (IEEE)
                1536-125X
                September 2005
                September 2005
                : 4
                : 5
                : 594-598
                Article
                10.1109/TNANO.2005.851426
                7eec0d6f-5948-46c6-b136-827776c3fd37
                © 2005
                History

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