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      Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

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          cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain

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            GaP-nucleation on exact Si (001) substrates for III/V device integration

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              Nature of optically induced defects in Ga1−xAlxAs–GaAs double‐heterojunction laser structures

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 15 2011
                August 15 2011
                : 99
                : 7
                : 071109
                10.1063/1.3624927
                © 2011
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