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      Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

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          Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

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            High dielectric constant oxides

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              Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 30 2017
                January 30 2017
                : 110
                : 5
                : 052401
                Affiliations
                [1 ]Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
                [2 ]Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095, USA
                [3 ]Department of Optical Science and Engineering, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Fudan University, Shanghai 200433, China
                [4 ]Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA
                [5 ]Department of Physics and Astronomy, California State University, Northridge, California 91330, USA
                [6 ]Inston, Inc., Los Angeles, California 90095, USA
                Article
                10.1063/1.4975160
                7fb34137-7eb4-45dc-a3e3-c4612a3f4afd
                © 2017
                History

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