Electrically controlled pinning of Dzyaloshinskii-Moriya domain walls

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Abstract

We propose a method to all-electrically control a domain-wall position in a ferromagnetic nanowire with Dzyaloshinskii-Moriya interaction. The strength of this interaction can be controlled by an external electric field, which in turn allows a fine tuning of the pinning potential of a spin-spiral domain wall. It allows to create more mobile pinning sites and can also be advantageous for ultra-low power electronics.

Related collections

Most cited references 44

Record: found
Abstract: found
Article: not found

Magnetic domain-wall racetrack memory.

Stuart S P Parkin, Masamitsu Hayashi, Luc Thomas (2008)

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.

0 comments Cited 1294 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Classics in Magnetics A Phenomenological Theory of Damping in Ferromagnetic Materials

T.L. Gilbert (2004)

0 comments Cited 554 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: found
Article: not found

Magnetic domain-wall logic.

D A Allwood, G Xiong, C C Faulkner … (2005)

"Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.

0 comments Cited 536 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Publication date Created: 2015-07-26

Publication date Updated: 2016-03-29

Article

DOI: 10.1063/1.4944664

ArXiV ID: 1507.07285

SO-VID: 6e9cc903-8b10-4fa9-823e-18063e1a9ac5

License:

http://arxiv.org/licenses/nonexclusive-distrib/1.0/

History

Custom metadata

Journal reference Appl. Phys. Lett. 108, 122403 (2016)

Comments 5 pages, 2 figures

Categories cond-mat.mes-hall cond-mat.mtrl-sci

ScienceOpen disciplines: Condensed matter,Nanophysics

Data availability:

ScienceOpen disciplines: Condensed matter, Nanophysics

Electrically controlled pinning of Dzyaloshinskii-Moriya domain walls

Read this article at

Abstract

Related collections

RWTH Aachen Physics Collection

Most cited references 44

Magnetic domain-wall racetrack memory.

Classics in Magnetics A Phenomenological Theory of Damping in Ferromagnetic Materials

Magnetic domain-wall logic.

Author and article information

Journal

Article

History

Custom metadata

Comments

Comment on this article

Similar content 454