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      Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode

      Author(s): 1 , 2 , 2 , 2 , 1 , 1 , 1
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Depletion-Layer Photoeffects in Semiconductors

          Wolfgang W. Gärtner (1959)
          Article 0 comments Cited 191 times – based on 0 reviews     Review now
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            Variation of minority‐carrier diffusion length with carrier concentration in GaAs liquid‐phase epitaxial layers

            B. I. Miller, H. C. Casey, E. Pinkas (1973)
            Article 0 comments Cited 87 times – based on 0 reviews     Review now
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              nBn detector, an infrared detector with reduced dark current and higher operating temperature

              S Maimon, G. Wicks (2006)
              Article 0 comments Cited 83 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: November 13 2017
                Publication date (Print): November 13 2017
                Volume: 111
                Issue: 20
                Page: 201106
                Affiliations
                [1 ]Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel
                [2 ]SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel
                Article
                DOI: 10.1063/1.5005097
                SO-VID: 80b50231-0e02-46d3-9d75-b226967d9721
                Copyright © © 2017
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