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      Current-induced magnetization switching using electrically-insulating spin-torque generator

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          Abstract

          Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero current-induced SOT is expected because of the broken inversion symmetry; an electrical insulator can be a spin-torque generator. Here, we demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically-insulating generator of the SOTs, enabling the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by electrically-insulating oxides. We further found that the SOTs generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route towards energy-efficient, voltage-programmable spin-orbit devices based on solid-state switching of heavy metal oxidation.

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          Most cited references27

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          Spin torque switching with the giant spin Hall effect of tantalum

          We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
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            Spin Hall effects

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              A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

              Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
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                Author and article information

                Journal
                20 September 2017
                Article
                1709.07127
                80c2de2d-4a8e-4513-bceb-67f44350c2cf

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                cond-mat.mtrl-sci

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