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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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Applied Physics Letters

AIP Publishing

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      Most cited references 6

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      Defects in epitaxial multilayers

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        GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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          Defects associated with the accommodation of misfit between crystals

           J. Matthews (1975)
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            Author and article information

            Journal
            Applied Physics Letters
            Appl. Phys. Lett.
            AIP Publishing
            0003-6951
            1077-3118
            August 1985
            August 1985
            : 47
            : 3
            : 322-324
            10.1063/1.96206
            © 1985
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