ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
123
views
6
references
Top references
cited by
386
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
2
shares
Share
Twitter
Sina Weibo
Facebook
Email
446
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
Author(s):
R. People
,
J. C. Bean
Publication date
Created:
August 1985
Publication date
(Print):
August 1985
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Further versions
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Scholarly Publication Practices and Impact Factor Calculation and Manipulation
Most cited references
6
Record
: found
Abstract
: not found
Article
: not found
Defects in epitaxial multilayers
J.W. Matthews
,
A.E. Blakeslee
(1974)
0
comments
Cited
667
times
– based on
0
reviews
Review now
Record
: found
Abstract
: not found
Article
: not found
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
J. C. Bean
,
L Feldman
,
A. Fiory
…
(1984)
0
comments
Cited
222
times
– based on
0
reviews
Review now
Record
: found
Abstract
: not found
Article
: not found
Defects associated with the accommodation of misfit between crystals
J. Matthews
(1975)
0
comments
Cited
190
times
– based on
0
reviews
Review now
All references
Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
August 1985
Publication date (Print):
August 1985
Volume
: 47
Issue
: 3
Pages
: 322-324
Article
DOI:
10.1063/1.96206
SO-VID:
80ff49b1-20cb-4ea5-a0e7-dd73cc3e71f9
Copyright ©
© 1985
History
Data availability:
Comments
Comment on this article
Sign in to comment
Related Documents Log
scite_
Similar content
446
Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
Authors:
G. P. Watson
,
Y Xie
,
E. Fitzgerald
…
Solid-Phase Epitaxial Crystallisation of GexSi1-x Alloy Layers
Authors:
Robert G. Elliman
,
Wah-Chung Wong
,
Per Kringhøj
Resonant magnetotunneling of GexSi1−x resonant tunneling structures grown at extremely low temperature by molecular-beam epitaxy
Authors:
C. C. Chern
See all similar
Cited by
384
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
Authors:
D. J. Eaglesham
,
M Cerullo
Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures
Authors:
R. People
Generation of misfit dislocations in semiconductors
Authors:
P. M. J. Marée
,
J. Barbour
,
J. F. van der Veen
…
See all cited by
Most referenced authors
79
Verdejo A Jimenez
C P JR T H W JR R L W Van
J Matthews
See all reference authors