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      Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

      Authors: ,

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      Journal: Applied Physics Letters

      Publisher: AIP Publishing

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          Defects in epitaxial multilayers

           J.W. Matthews,  A.E. Blakeslee (1974)
          Article 0 comments Cited 650 times – based on 0 reviews     Review now
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            GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

             J. C. Bean,  L Feldman,  A. Fiory … (1984)
            Article 0 comments Cited 216 times – based on 0 reviews     Review now
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              Defects associated with the accommodation of misfit between crystals

               J. Matthews (1975)
              Article 0 comments Cited 182 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: August 1985
                Publication date (Print): August 1985
                Volume: 47
                Issue: 3
                Pages: 322-324
                Article
                DOI: 10.1063/1.96206
                Copyright statement: © 1985
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