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      Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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      Applied Physics Letters

      AIP Publishing

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          Most cited references 6

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          Defects in epitaxial multilayers

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            GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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              Defects associated with the accommodation of misfit between crystals

               J. Matthews (1975)
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                August 1985
                August 1985
                : 47
                : 3
                : 322-324
                Article
                10.1063/1.96206
                © 1985
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