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      Atomic layer deposition (ALD): from precursors to thin film structures

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      Thin Solid Films
      Elsevier BV

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          High-κ gate dielectrics: Current status and materials properties considerations

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            Structure and stability of ultrathin zirconium oxide layers on Si(001)

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              Atomic layer epitaxy

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                Author and article information

                Journal
                Thin Solid Films
                Thin Solid Films
                Elsevier BV
                00406090
                April 2002
                April 2002
                : 409
                : 1
                : 138-146
                Article
                10.1016/S0040-6090(02)00117-7
                8188a386-3601-4387-a634-f20e16ddba49
                © 2002

                http://www.elsevier.com/tdm/userlicense/1.0/

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