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      Two-dimensional boron: structures, properties and applications

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          Abstract

          This review highlights the power of theory in pursuit of two-dimensional boron and presents its versatile properties and prospects for applications.

          Abstract

          Situated between metals and non-metals in the periodic table, boron is one of the most chemically versatile elements, forming at least sixteen bulk polymorphs composed of interlinked boron polyhedra. In low-dimensionality, boron chemistry remains or becomes even more intriguing since boron clusters with several to tens of atoms favor planar or cage-like structures, which are similar to their carbon counterparts in terms of conformation and electronic structure. The similarity between boron and carbon has raised a question of whether there exists stable two-dimensional (2D) boron, as a conceptual precursor, from which other boron nanostructures may be built. Here, we review the current theoretical and experimental progress in realizing boron atomic layers. Starting by describing a decade-long effort towards understanding the size-dependent structures of boron clusters, we present how theory plays a role in extrapolating boron clusters into 2D form, from a freestanding state to that on substrates, as well as in exploring practical routes for their synthesis that recently culminated in experimental realization. While 2D boron has been revealed to have unusual mechanical, electronic and chemical properties, materializing its potential in practical applications remains largely impeded by lack of routes towards transfer from substrates and controlled synthesis of quality samples.

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          Two-Dimensional Gas of Massless Dirac Fermions in Graphene

          Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.
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            Graphene plasmonics for tunable terahertz metamaterials.

            Plasmons describe collective oscillations of electrons. They have a fundamental role in the dynamic responses of electron systems and form the basis of research into optical metamaterials. Plasmons of two-dimensional massless electrons, as present in graphene, show unusual behaviour that enables new tunable plasmonic metamaterials and, potentially, optoelectronic applications in the terahertz frequency range. Here we explore plasmon excitations in engineered graphene micro-ribbon arrays. We demonstrate that graphene plasmon resonances can be tuned over a broad terahertz frequency range by changing micro-ribbon width and in situ electrostatic doping. The ribbon width and carrier doping dependences of graphene plasmon frequency demonstrate power-law behaviour characteristic of two-dimensional massless Dirac electrons. The plasmon resonances have remarkably large oscillator strengths, resulting in prominent room-temperature optical absorption peaks. In comparison, plasmon absorption in a conventional two-dimensional electron gas was observed only at 4.2 K (refs 13, 14). The results represent a first look at light-plasmon coupling in graphene and point to potential graphene-based terahertz metamaterials.
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              Black phosphorus field-effect transistors

              Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is a tremendous challenge, and at the same time potentially rewarding. In this work, we succeed in fabricating field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometers. Drain current modulation on the order of 10E5 is achieved in samples thinner than 7.5 nm at room temperature, with well-developed current saturation in the IV characteristics, both are important for reliable transistor performance of the device. Sample mobility is also found to be thickness dependent, with the highest value up to ~ 1000 cm2/Vs obtained at thickness ~ 10 nm. Our results demonstrate the potential of black phosphorus thin crystal as a new two-dimensional material for future applications in nano-electronic devices.
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                Author and article information

                Journal
                CSRVBR
                Chemical Society Reviews
                Chem. Soc. Rev.
                Royal Society of Chemistry (RSC)
                0306-0012
                1460-4744
                2017
                2017
                : 46
                : 22
                : 6746-6763
                Affiliations
                [1 ]State Key Laboratory of Mechanics and Control of Mechanical Structures, and Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education
                [2 ]Nanjing University of Aeronautics and Astronautics
                [3 ]Nanjing 210016
                [4 ]China
                [5 ]Department of Materials Science and NanoEngineering
                [6 ]Rice University
                [7 ]Houston
                [8 ]USA
                [9 ]Department of Chemistry
                Article
                10.1039/C7CS00261K
                29085946
                819c4cfa-c41e-47d0-871d-77b91669fc1e
                © 2017

                http://rsc.li/journals-terms-of-use

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