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      Temperature dependent conductivity of Bi 4Ti 3O 12 ceramics induced by Sr dopants

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          Abstract

          Bi 4Ti 3O 12 is an important lead-free ferroelectric material. Doping modification of Bi 4Ti 3O 12 has attracted great attention to improving its performances. In this work, the effect of Sr dopants on the microstructure, dielectric, and conductivity of Bi 4Ti 3O 12 ceramic was investigated by XRD, SEM, and AC impedance spectroscopy. Substitution of 1 at% Sr for Bi decreased the grain size, suppressed the dielectric dispersion of Bi 4Ti 3O 12 ceramic at room temperature, and resulted in different effects on the conductivity of grains and grain boundaries. The conductivity of grains in Bi 4Ti 3O 12 ceramic was increased by the small amount of Sr dopants in the whole experimental temperature range. While the grain boundaries of 1 at% Sr-doped Bi 4Ti 3O 12 exhibited lower conductivity than pure Bi 4Ti 3O 12 below ~380 ℃ and higher conductivity above ~380 ℃. The experimental phenomena were interpreted in term of compensating defects for Sr dopants.

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          Journal
          Journal of Advanced Ceramics
          Journal of Advanced Ceramics
          Tsinghua University Press (Tsinghua University, Beijing 100084, China )
          2226-4108
          05 September 2018
          : 07
          : 03
          : 256-265 (pp. )
          Affiliations
          Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
          Author notes
          * Corresponding author. E-mail: lijb@ 123456bit.edu.cn
          Article
          2226-4108-07-03-256
          10.1007/s40145-018-0277-1

          This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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