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      Atomic layer epitaxy

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      Journal: Materials Science Reports
      Publisher: Elsevier BV

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          Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

          Yoshiji Horikoshi, Minoru Kawashima, Hiroshi Yamaguchi (1986)
          Article 0 comments Cited 110 times – based on 0 reviews     Review now
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            Migration-Enhanced Epitaxy of GaAs and AlGaAs

            Minoru Kawashima, Yoshiji Horikoshi, Hiroshi Yamaguchi (1988)
            Article 0 comments Cited 75 times – based on 0 reviews     Review now
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              Atomic layer epitaxy

              Markus V. Pessa, Colin Goodman (1986)
              Article 0 comments Cited 75 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Materials Science Reports
                Abbreviated Title: Materials Science Reports
                Publisher: Elsevier BV
                ISSN (Print): 09202307
                Publication date Created: January 1989
                Publication date (Print): January 1989
                Volume: 4
                Issue: 5
                Pages: 261-312
                Article
                DOI: 10.1016/S0920-2307(89)80006-4
                SO-VID: 82f5ce05-dbfd-4471-a583-ac85b8de26c1
                Copyright statement: © 1989
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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                Self URI (article page): http://linkinghub.elsevier.com/retrieve/pii/S0920230789800064

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