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      Measurement of a solid-state triple point at the metal–insulator transition in VO2

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          Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.

          In the classic transistor, the number of electric charge carriers--and thus the electrical conductivity--is precisely controlled by external voltage, providing electrical switching capability. This simple but powerful feature is essential for information processing technology, and also provides a platform for fundamental physics research. As the number of charges essentially determines the electronic phase of a condensed-matter system, transistor operation enables reversible and isothermal changes in the system's state, as successfully demonstrated in electric-field-induced ferromagnetism and superconductivity. However, this effect of the electric field is limited to a channel thickness of nanometres or less, owing to the presence of Thomas-Fermi screening. Here we show that this conventional picture does not apply to a class of materials characterized by inherent collective interactions between electrons and the crystal lattice. We prepared metal-insulator-semiconductor field-effect transistors based on vanadium dioxide--a strongly correlated material with a thermally driven, first-order metal-insulator transition well above room temperature--and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state. This non-local switching of the electronic state is achieved by applying a voltage of only about one volt. In a voltage-sweep measurement, the first-order nature of the metal-insulator transition provides a non-volatile memory effect, which is operable at room temperature. Our results demonstrate a conceptually new field-effect device, extending the concept of electric-field control to macroscopic phase control.
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            Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging

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              Divergent Nematic Susceptibility in an Iron Arsenide Superconductor

              Within the Landau paradigm of continuous phase transitions, ordered states of matter are characterized by a broken symmetry. Although the broken symmetry is usually evident, determining the driving force behind the phase transition can be complicated by coupling between distinct order parameters. We show how measurement of the divergent nematic susceptibility of the iron pnictide superconductor Ba(Fe(1-x)Co(x))(2)As(2) distinguishes an electronic nematic phase transition from a simple ferroelastic distortion. These measurements also indicate an electronic nematic quantum phase transition near the composition with optimal superconducting transition temperature.
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                Author and article information

                Journal
                Nature
                Nature
                Springer Science and Business Media LLC
                0028-0836
                1476-4687
                August 2013
                August 21 2013
                August 2013
                : 500
                : 7463
                : 431-434
                Article
                10.1038/nature12425
                23969461
                83151f7d-29f8-4b92-bd33-015b37c769fd
                © 2013

                http://www.springer.com/tdm

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