Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Simon, John D; Steiner, Myles A.; Jain, Nikhil; Young, David L; Ptak, Aaron J.; Packard, Corinne E.; Sweet, Cassi A.; Schulte, Kevin L.

doi:10.1063/1.4939661

Record: found
Abstract: not found
Article: not found

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Author(s): Cassi A. Sweet ¹ , Kevin L. Schulte ² , John D. Simon ² , Myles A. Steiner ² , Nikhil Jain ² , David L. Young ² , Aaron J. Ptak ² , Corinne E. Packard ¹ ^, ²

Publication date (Electronic): January 07 2016

Journal: Applied Physics Letters

Publisher: AIP Publishing

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Most cited references 14

Record: found
Abstract: not found
Book: not found

Physical Properties of III‐V Semiconductor Compounds

Sadao Adachi (1992)

0 comments Cited 106 times – based on 0 reviews

Bookmark

Record: found
Abstract: not found
Article: not found

Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

D Friedman, S. R. Kurtz, A. Duda … (2013)

0 comments Cited 77 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Book: not found

GaAs and Related Materials

Sadao Adachi (1994)

0 comments Cited 63 times – based on 0 reviews

Bookmark

All references

Author and article information

Journal

Journal ID (publisher-id): APPLAB

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: January 04 2016

Publication date (Print): January 04 2016

Publication date (Electronic): January 07 2016

Volume: 108

Issue: 1

Page: 011906

Affiliations

[1 ] Metallurgical and Materials Engineering Department, Colorado School of Mines, Golden, Colorado 80401, USA

[2 ] National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Article

DOI: 10.1063/1.4939661

SO-VID: 8525558c-4730-4b13-bd20-bb719654cf83

License:

https://publishing.aip.org/authors/rights-and-permissions

History

Data availability:

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Read this article at

Related collections

Fracture and Structural Integrity

Most cited references 14

Physical Properties of III‐V Semiconductor Compounds

Optical enhancement of the open-circuit voltage in high quality GaAs solar cells

GaAs and Related Materials

Author and article information

Journal

Affiliations

Article

History

Comments

Comment on this article

Similar content 5,254

Cited by 16

Most referenced authors 152