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Abstract
Ultrathin (0.3-3 nm) metal dichalcogenides exhibit confinement of carriers, evolution
of band-structure and photophysical properties with thickness, high on/off rectification
(in MoS2, WS2, and so forth) and high thermal absorption. Here, we leverage the stable
sulfur/nobel-metal binding to incorporate highly capacitive gold nanoparticles (Au
NPs) onto MoS2 to raise the effective gate-voltage by an order of magnitude. Functionalization
is achieved via both diffusion limited aggregation and instantaneous reaction arresting
(using microwaves) with selective deposition on crystallographic edges (with 60° displacement).
The electrical, thermal, and Raman studies show a highly capacitive interaction between
Au NP and MoS2 flakes (CAu-MoS2 = 2.17 μF/cm(2)), a low Schottky barrier (14.52 meV),
a reduced carrier-transport thermal-barrier (253 to 44.18 meV after Au NP functionalization),
and increased thermal conductivity (from 15 to 23 W/mK post NP deposition). The process
could be employed to attach electrodes to heterostructures of graphene and MoS2, where
a gold film could be grown to act as an electron-tunneling gate-electrode connected
to MoS2.