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      Precise determination of two-carrier transport properties in the topological insulator TlBiSe\(_2\)

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          Abstract

          We report the electric transport study of the three-dimensional topological insulator TlBiSe\(_2\). We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda \(et~al.\), Phys. Rev. Lett. \(\bm{105}\), 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{\"u}neisen formula and yielded the Debye temperature \(\varTheta_{\rm{D}}=113 \pm 14\)~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

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          Electrical detection of spin-polarized surface states conduction in (Bi(0.53)Sb(0.47))2Te3 topological insulator.

          Strong spin-orbit interaction and time-reversal symmetry in topological insulators enable the spin-momentum locking for the helical surface states. To date, however, there has been little report of direct electrical spin injection/detection in topological insulator. In this Letter, we report the electrical detection of spin-polarized surface states conduction using a Co/Al2O3 ferromagnetic tunneling contact in which the compound topological insulator (Bi0.53Sb0.47)2Te3 was used to achieve low bulk carrier density. Resistance (voltage) hysteresis with the amplitude up to about 10 Ω was observed when sweeping the magnetic field to change the relative orientation between the Co electrode magnetization and the spin polarization of surface states. The two resistance states were reversible by changing the electric current direction, affirming the spin-momentum locking in the topological surface states. Angle-dependent measurement was also performed to further confirm that the abrupt change in the voltage (resistance) was associated with the magnetization switching of the Co electrode. The spin voltage amplitude was quantitatively analyzed to yield an effective spin polarization of 1.02% for the surface states conduction in (Bi0.53Sb0.47)2Te3. Our results show a direct evidence of spin polarization in the topological surface states conduction. It might open up great opportunities to explore energy-efficient spintronic devices based on topological insulators.
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            Experimental verification of the surface termination in the topological insulator TlBiSe2 using core-level photoelectron spectroscopy and scanning tunneling microscopy

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              Electrical Detection of the Spin Polarization Due to Charge Flow in the Surface State of the Topological Insulator Bi1 5Sb0 5Te1 7Se1 3

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                Author and article information

                Journal
                2015-05-21
                Article
                1505.05624
                8584615e-71d8-4df7-ac60-345c6d0657be

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                6 pages, 5 figures, to be published in Physical Review B
                cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

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